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  ? semiconductor components industries, llc, 2008 march, 2008 - rev. 0 1 publication order number: nsb13211dw6/d NSB13211DW6T1G dual complementary bias resistor transistors complementary brts with monolithic bias network NSB13211DW6T1G contains a single pnp bias resistor transistor and a single npn bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. this device is designed to replace multiple transistors and resistors on customer boards by integrating these components into a single device. NSB13211DW6T1G is housed in a sc-88/sot-363 package which is ideal for low power surface mount applications in space constrained applications. features ? simplifies circuit design ? reduces board space ? reduces component count ? q1: pnp brt, r1 = r2 = 4.7 k ? q2: npn brt, r3 = r4 = 10 k ? this is a pb-free device applications ? logic switching ? amplification ? driver circuits ? interface circuits maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 , - minus sign for q 1 (pnp) omitted) rating symbol value unit collector\base voltage v cbo 50 vdc collector\emitter voltage v ceo 50 vdc collector current i c 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. pnp and npn silicon bias resistor transistors http://onsemi.com sc-88/sot-363 case 419b style 1 marking diagram q 1 r 1 r 2 r 4 r 3 q 2 (1) (2) (3) (4) (5) (6) 1 6 n3 m   1 6 n3 = device code m = date code*  = pb-free package (note: microdot may be in either location) *date code orientation and/or position may vary depending upon manufacturing location. device package shipping ? ordering information NSB13211DW6T1G sc-88 (pb-free) 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
NSB13211DW6T1G http://onsemi.com 2 thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 180 (note 1) 1.44 (note 1) mw mw/ c thermal resistance, junction\to\ambient r  ja 692 (note 1) c/w characteristic (both junctions heated) symbol max unit total device dissipation, t a = 25 c derate above 25 c p d 230 1.83 mw mw/ c thermal resistance, junction\to\ambient r  ja 544 c/w junction and storage temperature t j , t stg -55 to +150 c 1. fr-4 @ minimum pad of 1.45 mm 2 , 1 oz cu. electrical characteristics - q1 (pnp brt) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo - - 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo - - 500 nadc emitter-base cutoff current (v eb = 6.0 v, i c = 0) i ebo - - 1.5 madc collector-base breakdown voltage (i c = 10  a, i e = 0) v (br)cbo 50 - - vdc collector-emitter breakdown voltage (note 2) (i c = 2.0 ma, i b = 0) v (br)ceo 50 - - vdc on characteristics (note 2) dc current gain (v ce = 10 v, i c = 5.0 ma) h fe 15 27 - collector-emitter saturation voltage (i c = 10 ma, i b = 1 ma) v ce(sat) - - 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k  ) v ol - - 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k  ) v oh 4.9 - - vdc input resistor r 1 3.3 4.7 6.1 k  resistor ratio r 1 /r 2 0.8 1.0 1.2 2. pulse test: pulse width < 300  s, duty cycle < 2.0%
NSB13211DW6T1G http://onsemi.com 3 electrical characteristics - q2 (npn brt) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo - - 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo - - 500 nadc emitter-base cutoff current (v eb = 6.0 v, i c = 0) i ebo - - 0.5 madc collector-base breakdown voltage (i c = 10  a, i e = 0) v (br)cbo 50 - - vdc collector-emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 - - vdc on characteristics (note 3) dc current gain (v ce = 10 v, i c = 5.0 ma) h fe 35 60 - collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) v ce(sat) - - 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k  ) v ol - - 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k  ) v oh 4.9 - - vdc input resistor r 1 7.0 10 13 k  resistor ratio r 1 /r 2 0.8 1.0 1.2 3. pulse test: pulse width < 300  s, duty cycle < 2.0%
NSB13211DW6T1G http://onsemi.com 4 package dimensions sc-88 (sot-363 ) case 419b-02 issue v style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2  mm inches  scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b-01 obsolete, new standard 419b-02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 -e- b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. nsb13211dw6/d publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative


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